Photoelectric-conversion-device fabrication method

A photoelectric-conversion-device fabrication method that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon to fabricate a photoelectric conversion device having the photoelectric conversion layer, the method further comprising the steps of:

• obtaining a relationship between a Raman ratio of the i-layer, a nitrogen-atom concentration in a film-formation atmosphere for forming the i-layer, and an efficiency of the photoelectric conversion device;
• determining an upper limit of the nitrogen-gas concentration in a film-formation atmosphere at a predetermined Raman ratio of the i-layer on the basis of the obtained relationship;
• and
• forming the i-layer having the predetermined Raman ratio while controlling the nitrogen-gas concentration so as to have a value equal to or less than the determined upper limit.

A method, comprising:

• fabricating a photoelectric conversion device by executing a method including forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon, wherein forming the photoelectric layer includes:
• obtaining a relationship between a Raman ratio of the i-layer and a nitrogen-atom concentration of at least one of the i-layer or an i-layer-formation atmosphere;
• determining an upper limit of the nitrogen-atom concentration in at least one of the i-layer or the i-layer-formation atmosphere at a predetermined Raman ratio of the i-layer on the basis of the obtained relationship;
• and
• controlling the nitrogen-atom concentration in at least one of the i-layer or the i-layer-formation atmosphere so as to have a value equal to or less than the determined upper limit of the nitrogen-atom concentration in at least one of the i-layer or the i-layer-formation atmosphere.