An imaging apparatus manufacturing method, the method comprising:
- providing a protective tape on a surface of a sealing film formed on a first surface of a semiconductor substrate of a photosensor;
- providing a visible light transmitting plate on a second surface of the semiconductor substrate;
- disposing a lens unit on the visible light transmitting plate;
- and
- removing the protective tape after the lens unit is disposed;
- wherein the photosensor comprises, on the first surface of the semiconductor substrate:
- a photoelectric conversion device region and a connection pad;
- an insulating film;
- a wiring line provided on a lower surface of the insulating film to be connected to the connection pad;
- a columnar electrode provided under a land of the wiring line;
- and
- the sealing film, the sealing film being provided around the columnar electrode under the wiring line and under the insulating film;
- and
- wherein a total thickness of the semiconductor substrate and the sealing film is 350 μm or less.