Wall structures for a semiconductor wafer

A method comprising:

• providing a wafer assembly comprising:
• an n-doped layer disposed above a substrate;
• an active layer for emitting light disposed above the n-doped layer;
• and
• a p-doped layer disposed above the active layer;
• defining a plurality of vertical light-emitting diode (VLED) dies and one or more intermediate structures between at least a first VLED die of the plurality and at least a second VLED die adjacent to the first VLED die by removing material from at least the p-doped layer;
• and
• applying a first force to the first VLED die as part of an operation to remove the substrate from the wafer assembly.

A method comprising:

• providing a wafer assembly comprising multiple semiconductor layers disposed on a substrate;
• forming trenches in the multiple semiconductor layers to define a plurality of semiconductor dies such that there are two or more trenches and one or more intermediate structures between at least a first die of the plurality and at least a second die adjacent to the first die;
• and
• applying a first force to the first die as part of an operation to remove the substrate from the wafer assembly.

A method comprising:

• providing a wafer assembly comprising multiple semiconductor layers disposed on a substrate;
• defining a plurality of semiconductor dies by removing material from the multiple semiconductor layers such that there is a space between a first die of the plurality and at least a second die adjacent to the first die;
• disposing a material in the space between the first die and at least the second die;
• and
• applying a first force to the first die as part of an operation to remove the substrate from the wafer assembly, wherein the material is configured to prevent damage to the at least the second die from the first force.

A method comprising:

• providing a wafer assembly comprising multiple semiconductor layers disposed on a substrate;
• defining a plurality of semiconductor dies and one or more means for preventing damage to the plurality of dies by removing material from the multiple semiconductor layers;
• and
• applying a force to at least one of the dies as part of an operation to remove the substrate from the wafer assembly.

A method comprising:

• providing a wafer assembly comprising multiple semiconductor layers disposed on a substrate;
• defining a plurality of semiconductor dies and one or more intermediate structures between at least a first die of the plurality and at least a second die adjacent to the first die by removing material from the multiple semiconductor layers;
• and
• applying a first laser pulse to the first die as part of an operation to remove the substrate from the wafer assembly.

A method comprising:

• providing a wafer assembly comprising multiple semiconductor layers disposed on a substrate;
• defining a plurality of semiconductor dies and one or more means for preventing damage to the plurality of dies by removing material from the multiple semiconductor layers;
• and
• applying a laser pulse to at least one of the dies as part of an operation to remove the substrate from the wafer assembly.