Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
AssigneeFUJIFILM Corporation
InventorsHideaki Tsubaki, Shinichi Kanna
Life of this patent
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Abstract
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.
Claims9
A pattern forming method, comprising:
- applying, to a substrate, a resist composition of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer containing an organic solvent decreases upon irradiation with actinic rays or radiation, so as to form a resist film;
- exposing the resist film;
- and
- developing the resist film with the negative developer,
- wherein the negative developer containing an organic solvent is a developer consisting of butyl acetate, and the resist composition contains a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure and contains a repeating unit represented by the following formula (pA):
- wherein R represents a hydrogen atom, a halogen atom or a linear or branched alkyl group having a carbon number of 1 to 4, and a plurality of R's may be the same or different;
- A represents a single bond, or a sole group or a combination of two or more groups selected from the group consisting of an alkylene group, an ether group, a thioether group, a carbonyl group, an ester group, an amido group, a sulfonamido group, a urethane group and a ureylene group;
- and
- Rp1 represents a group represented by any one of the following formulae (pI) to (pV);
- in formulae (pI) to (pV), R11 represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group;
- Z represents an atomic group necessary for forming a cycloalkyl group together with the carbon atom;
- R12 to R16 each independently represents a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R12 to R14 or either one of R15 and R16 represents a cycloalkyl group;
- R17 to R21 each independently represents a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R17 to R21 represents a cycloalkyl group and that either one of R19 and R21 represents a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group;
- R22 to R25 each independently represents a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R22 to R25 represents a cycloalkyl group;
- and
- R23 and R24 may combine with each other to form a ring.
A pattern forming method, comprising:
- applying, to a substrate, a resist composition of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer containing an organic solvent decreases upon irradiation with actinic rays or radiation, so as to form a resist film;
- exposing the resist film;
- and
- developing the resist film with the negative developer,
- wherein the resist composition contains a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure and contains a repeating unit represented by the following formula (pA):
- wherein R represents a hydrogen atom, a halogen atom or a linear or branched alkyl group having a carbon number of 1 to 4, and a plurality of R's may be the same or different;
- A represents a single bond, or a sole group or a combination of two or more groups selected from the group consisting of an alkylene group, an ether group, a thioether group, a carbonyl group, an ester group, an amido group, a sulfonamido group, a urethane group and a ureylene group;
- and
- Rp1 represents a group represented by any one of the following formulae (pI) to (pV);
- in formulae (pI) to (pV), R11 represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group;
- Z represents an atomic group necessary for forming a cycloalkyl group together with the carbon atom;
- R12 to R16 each independently represents a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R12 to R14 or either one of R15 and R16 represents a cycloalkyl group;
- R17 to R21 each independently represents a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R17 to R21 represents a cycloalkyl group and that either one of R19 and R21 represents a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group;
- R22 to R25 each independently represents a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R22 to R25 represents a cycloalkyl group;
- and
- R23 and R24 may combine with each other to form a ring;
- wherein the negative developer containing an organic solvent is ethyl-3-ethoxypropionate.
Dependencies are inferred from the claim text.