Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
AssigneeFUJIFILM Corporation
InventorsHideaki Tsubaki, Shinichi Kanna
Life of this patent
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Abstract
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.
Claims13
A pattern forming method, comprising:
- (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film;
- (B) exposing the resist film a plurality of times through a mask;
- and
- (D) developing the resist film with a negative developer,
- wherein the positive resist composition contains a resin whose solubility in an alkali developer increases and whose solubility in an organic solvent decreases under the action of an acid, the resin being selected from the group consisting of:
- (ii) an alicyclic hydrocarbon-based acid-decomposable resin having a lactone group;
- and
- (iii) an alicyclic hydrocarbon-based acid-decomposable resin containing a repeating unit having an alicyclic hydrocarbon structure substituted by a polar group,
- wherein the resin contains substantially no fluorine atom.
A pattern forming method, comprising:
- (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist :film;
- (B) exposing the resist film iplurality of times through a mask;
- and
- (D) developing the resist film with a negative developer,
- wherein the positive resist composition contains a resin whose solubility in an alkali developer increases and whose solubility in an organic solvent decreases under the action of an acid, the resin being selected from the group consisting of:
- (ii) an alicyclic hydrocarbon-based acid-decomposable resin having a lactone group;
- and
- (iii) an alicyclic hydrocarbon-based acid-decomposable resin containing a repeating units having an alicyclic hydrocarbon structure substituted by a polar group,
- wherein all repeating units of the resin consist essentially of (meth)acrylate-based repeating unit.
Dependencies are inferred from the claim text.