Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same

A method of forming a patterned, silicon-enriched developable antireflective coating comprising:

• forming a silicon-enriched developable antireflective composition comprising:
• a silicon-enriched polymer formulated to be soluble in water;
• and
• a crosslinking agent formulated to react with at least one moiety of the silicon-enriched polymer;
• reacting the silicon-enriched polymer and the crosslinking agent to form a silicon-enriched developable antireflective material insoluble in water and having at least one acid-sensitive moiety;
• forming a positive-tone photosensitive material over the silicon-enriched developable antireflective material;
• exposing regions of the positive-tone photosensitive material to radiation to render the exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material soluble in at least one aqueous alkaline solution;
• and
• removing the exposed regions of the positive-tone photosensitive material and the underlying regions of the silicon-enriched developable antireflective material using the at least one aqueous alkaline solution.

A method of forming a patterned, silicon-enriched antireflective material comprising:

• forming a silicon-enriched developable antireflective material comprising a silicon-enriched polymer and a crosslinking agent;
• and
• forming a positive-tone photosensitive material over the silicon-enriched developable antireflective material prior to crosslinking the silicon-enriched developable antireflective material;
• exposing regions of the positive-tone photosensitive material to radiation to crosslink regions of the silicon-enriched developable antireflective material underlying the exposed regions of the positive-tone photosensitive material;
• and
• removing non-exposed regions of the positive-tone photosensitive material and other regions of the silicon-enriched developable antireflective material underlying the non-exposed regions of the positive-tone photosensitive material.

A method of forming a patterned, silicon-enriched antireflective coating comprising:

• forming a silicon-enriched developable antireflective material comprising a silicon-enriched polymer and a crosslinking agent;
• and
• forming a positive-tone photosensitive material over the silicon-enriched developable antireflective material prior to crosslinking the silicon-enriched developable antireflective material;
• exposing regions of the positive-tone photosensitive material to radiation to crosslink underlying regions of the silicon-enriched developable antireflective material;
• removing the exposed regions of the positive-tone photosensitive material using a first solvent comprising an aqueous alkaline solution;
• and
• removing non-exposed regions of the positive-tone photosensitive material and regions of the silicon-enriched developable antireflective material under the non-exposed regions of the positive-tone photosensitive material using a second solvent.

A method of forming a patterned, silicon-enriched antireflective coating comprising:

• forming a silicon-enriched developable antireflective composition on a material, the silicon-enriched developable antireflective composition comprising a silicon-enriched polymer and a crosslinking agent;
• exposing the silicon-enriched developable antireflective composition to heat to form a silicon-enriched developable antireflective material;
• forming a positive-tone photosensitive composition over the silicon-enriched developable antireflective material;
• exposing the positive-tone photosensitive composition to heat to form a positive-tone photosensitive material;
• exposing regions of the positive-tone photosensitive material to radiation;
• removing the exposed regions of the positive-tone photosensitive material to expose underlying regions of the silicon-enriched developable antireflective material;
• forming a freeze overcoat over the non-exposed regions of the positive-tone photosensitive material and the underlying regions of the silicon-enriched developable antireflective material;
• crosslinking the exposed regions of the silicon-enriched developable antireflective material;
• and
• removing the freeze overcoat, the non-exposed regions of the positive-tone photosensitive material and non-crosslinked regions of the silicon-enriched developable antireflective material.