Method for preparing alignment mark for multiple patterning
AssigneeTokyo Electron Limited
InventorShannon W. Dunn
Life of this patent
Estimating the term…
Abstract
A method for image pattern recognition in a multi-image patterning scheme is described. The method includes forming a first feature pattern on a substrate using a lithographic process, and forming a second feature pattern on the substrate using the lithographic process. The method further includes forming an inspection alignment mark on the substrate to distinguish the first feature pattern from the second feature pattern. The inspection alignment mark comprises a negative tone pattern having a first alignment structure aligned with at least a portion of the first feature pattern and a second alignment structure aligned with at least a portion of the second feature pattern, wherein the first alignment structure is independent from the second alignment structure.
Claims19
A method for image pattern recognition in a multi-image patterning scheme, comprising:
- forming a first feature pattern on a substrate using a lithographic process;
- forming a second feature pattern on said substrate using said lithographic process;
- and
- forming an inspection alignment mark on said substrate to distinguish said first feature pattern from said second feature pattern, said inspection alignment mark comprising a negative tone pattern having a first alignment structure aligned with at least a portion of said first feature pattern and a second alignment structure aligned with at least a portion of said second feature pattern, said first alignment structure independent from said second alignment structure,
- wherein said forming said inspection alignment mark on said substrate comprises preparing a region of photo-sensitive material with one or more first openings arranged in an interior of said region of photo-sensitive material to serve as said first alignment structure and one or more second openings arranged in said interior of said region of photo-sensitive material to serve as said second alignment structure, said one or more first openings and said one or more second openings being identifiable from one another.
A method for image pattern recognition in a multi-image patterning scheme, comprising:
- forming a first feature pattern on a substrate using a lithographic process;
- forming a second feature pattern on said substrate using said lithographic process;
- and
- forming an inspection alignment mark on said substrate to distinguish said first feature pattern from said second feature pattern, said inspection alignment mark comprising a negative tone pattern having a first alignment structure aligned with at least a portion of said first feature pattern and a second alignment structure aligned with at least a portion of said second feature pattern, said first alignment structure independent from said second alignment structure,
- wherein said lithographic process comprises:
- forming a first layer of photo-sensitive material on a substrate;
- imaging said first layer of photo-sensitive material with a first image pattern;
- developing said first layer of photo-sensitive material to form said first feature pattern and said inspection alignment mark;
- applying a chemical freeze layer over said first layer of photo-sensitive material and reacting said chemical freeze layer with an exposed surface of said first layer of photo-sensitive material;
- stripping said chemical freeze layer;
- forming a second layer of photo-sensitive material on the substrate;
- imaging said second layer of photo-sensitive material with a second image pattern;
- developing said second layer of photo-sensitive material to form said second feature pattern;
- and
- transferring said first feature pattern, said second feature pattern, and said inspection alignment mark to an underlying layer using an etching process.
A method for image pattern recognition in a multi-image patterning scheme, comprising:
- forming a first feature pattern on a substrate using a lithographic process;
- forming a second feature pattern on said substrate using said lithographic process;
- and
- forming an inspection alignment mark on said substrate to distinguish said first feature pattern from said second feature pattern, said inspection alignment mark comprising a negative tone pattern having a first alignment structure aligned with at least a portion of said first feature pattern and a second alignment structure aligned with at least a portion of said second feature pattern, said first alignment structure independent from said second alignment structure,
- wherein said lithographic process comprises:
- forming a first layer of photo-sensitive material on a substrate;
- imaging said first layer of photo-sensitive material with a first image pattern;
- developing said first layer of photo-sensitive material to form said first feature pattern;
- applying a chemical freeze layer over said first layer of photo-sensitive material and reacting said chemical freeze layer with an exposed surface of said first layer of photo-sensitive material;
- stripping said chemical freeze layer;
- forming a second layer of photo-sensitive material on said substrate;
- imaging said second layer of photo-sensitive material with a second image pattern;
- developing said second layer of photo-sensitive material to form said second feature pattern and said inspection alignment mark;
- and
- transferring said first feature pattern, said second feature pattern, and said inspection alignment mark to an underlying layer using an etching process.
Dependencies are inferred from the claim text.