Upper layer film forming composition and method of forming photoresist pattern

A method of forming a photoresist pattern comprising:

• a step of forming a photoresist film by applying a photoresist to a substrate;
• a step of forming an upper layer film on the photoresist film;
• and
• a step of forming a resist pattern by irradiating the photoresist film and the upper layer film with radiation via water through a mask having a specific pattern, and developing the resist pattern,
• wherein the step of forming an upper layer film is carried out using an supper layer film forming composition comprising:
• (A) a resin dissolvable in a developer for the photoresist film;
• and
• (B) a compound shown by the following formula (2),
• wherein R6 individually represents a linear or branched alkyl group having 1 to 10 carbon atoms, an alicyclic alkyl group having 3 to 10 carbon atoms or a derivative thereof, a hydroxyl group, a carboxyl group, an alkyl ether group, an alkyloxycarbonyl group, or an alkylcarbonyloxy group;
• Z represents a linear, branched or alicyclic hydrocarbon having 4 to 12 carbon atoms or a substituted or unsubstituted aromatic hydrocarbon;
• m is 0 to 4;
• and n is 1 to 4,
• wherein the resin (A) has at least one repeating unit selected from repeating units shown by the following formulas (I-1), (I-2), and (I-3),
• wherein R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group, R2, R3, and R4 represent a single bond or a divalent organic group, R5 represents a linear or branched alkyl group having 1 to 10 carbon atoms in which at least one hydrogen atom is substituted by a fluorine atom or an alicyclic alkyl group having 3 to 10 carbon atoms, and R1x represents a linear or branched alkyl group having 1 to 3 carbon atoms in which at least one hydrogen atom is substituted by a fluorine atom,
• wherein an amount of the compound (B) is 3 parts by mass or less for 100 parts by mass of the resin (A).