Chemically amplified positive-type photoresist composition for thick film, chemically amplified dry film for thick film, and method for production of thick film resist pattern

A method for producing a thick film resist pattern, comprising:

• forming a thick film photoresist layer having a film thickness of 10 to 150 μm on a support, wherein said thick film photoresist layer comprises a chemically amplified positive-type photoresist composition, to obtain a thick film photoresist layered product;
• selectively irradiating the thick film photoresist layered product with an actinic ray or radiation;
• and
• developing the thick film photoresist layered product to obtain a thick film resist pattern, wherein the chemically amplified positive-type photoresist composition comprises:
• component (A) which includes at least one compound capable of producing an acid upon irradiation with an actinic ray or radiation, and component (B) which includes at least one resin whose alkali solubility increases by the action of an acid,
• wherein the component (A) comprises an onium fluorinated alkyl fluorophosphate represented by the following general formula (a1):
• wherein A represents a sulfur atom or an iodine atom of valence m, wherein m is 1 or 2;
• n represents the number of repeating units of the structure in parenthesis, and is an integer of 0 to 3;
• R, which is an organic group bonding to A, represents an aryl group having 6 to 30 carbon atoms, a heterocyclic group having 4 to 30 carbon atoms, an alkyl group having 1 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, or an alkynyl group having 2 to 30 carbon atoms;
• and R may be substituted with at least one selected from the group consisting of alkyl, hydroxyl, alkoxy, alkylcarbonyl, arylcarbonyl, alkoxycarbonyl, aryloxycarbonyl, arylthiocarbonyl, acyloxy, arylthio, alkylthio, aryl, heterocyclic, aryloxy, alkylsulfinyl, arylsulfinyl, alkylsulfonyl, arylsulfonyl, amino, cyano and nitro groups, and a halogen atom;
• the number of R is m+n (m−1)+1;
• and R may be identical or different to each other;
• two or more R may bond directly or via —O—, —S—, —SO—, —SO2—, —NH—, —NR′—, —CO—, —COO—, —CONN—, an alkylene group having 1 to 3 carbon atoms, or a phenylene group to form a ring structure containing A;
• R′ is an alkyl group having 1 to 5 carbon atoms or an aryl group having 6 to 10 carbon atoms;
• D is a structure represented by the following general formula (a2),
• wherein E represents an alkylene group having 1 to 8 carbon atoms, an arylene group having 6 to 20 carbon atoms, or a divalent group of a heterocyclic compound having 8 to 20 carbon atoms, and E may be substituted with at least one selected from the group consisting of an alkyl group having 1 to 8 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an aryl group having 6 to 10 carbon atoms, a hydroxyl group, a cyano group, a nitro group, and a halogen atom;
• G represents —O—, —S—, —SO—, —SO2—, —NH—, —NR′—, —CO—, —COO—, —CONH—, an alkylene group having 1 to 3 carbon atoms, or a phenylene group;
• a is an integer of 0 to 5;
• E present in the number of “a+1” may be identical or different to each other;
• and G present in the number of “a” may be identical or different to each other;
• R′ is as defined above;
• X− is a counter ion of an onium;
• the number of X− is n+1 per molecule, and at least one thereof is an anion of fluorinated alkyl fluorophosphoric acid represented by the general formula (a3) below, and the remaining may be other anions,
• [(Rf)bPF6-b]− (a3)
• wherein Rf represents an alkyl group in which at least 80% of hydrogen atoms are each substituted with a fluorine atom;
• b represents the number thereof, and is an integer of 1 to 5;
• and
• Rf present in the number of “b” may be identical or different to each other.