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US 8,507,177 B2Granted
Photoresist materials and photolithography processes
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsien-Cheng Wang, Chin-Hsiang Lin, Heng-Jen Lee, Ching-Yu Chang, Hua-Tai Lin, Burn Jeng Lin
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Abstract
A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.
Claims19
A material for use in lithography processing, comprising:
- a polymer that turns soluble to a base solution in response to reaction with acid;
- a plurality of magnetically amplified generators (MAGs) each having a photo-acid generator (PAG) bonded to a magnetic element and each configured to decompose to form acid bonded with the magnetic element in response to a radiation energy, wherein the magnetic element comprises at least one of Fe3O4 and Fe2O3 doped with transitional metal ions;
- and;
- a plurality of quenchers that are capable of neutralizing acid.
1 more element
A material for use in lithography processing, comprising:
- a polymer;
- a magnetically amplified generator (MAG) that forms an acid in response to radiation;
- and
- a magnetic element that is bonded to the MAG, wherein the magnetic element comprises at least one of Fe3O4 and Fe2O3 doped with transitional metal ions.
1 more element
A method, comprising:
- forming a photo sensitive material over a wafer, the photo sensitive material including a magnetically amplified generator (AMG) and a magnetic element, wherein the magnetic element comprises at least one of Fe3O4 and Fe2O3 doped with transitional metal ions;
- exposing the photo sensitive material to radiation;
- and
- developing the exposed photo sensitive material.
1 more element
Dependencies are inferred from the claim text.