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US 8,507,111 B2Granted
Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKazuyoshi Inoue, Shigekazu Tomai, Masato Matsubara
Life of this patent
Estimating the term…
Abstract
Provided are transparent electroconductive films and transparent electroconductive glass substrates, which contain a transparent electroconductive film and a metal thin film over the glass substrate.
Claims19
A product selected from the group consisting of A) a transparent electroconductive film, B) a transparent electroconductive film, C) a transparent electroconductive glass substrate, and D) a transparent electroconductive glass substrate, wherein
- A) a transparent electroconductive film, which is made mainly of indium oxide, and comprises:
- one or two or more metal(s) selected from a first metal group M1 consisting of W, Mo, Ni, Pt and Pd, or an oxide or oxides of the metal(s), and
- an oxide or oxides of one or two or more metal(s) selected from a second metal group M2 consisting of lanthanoid-based metals, which second metal group M2 is not Ce;
- B) a transparent electroconductive film, which is made mainly of indium oxide, and comprises:
- one or two or more metal(s) selected from a first metal group M1 consisting of W, Mo, Ni, Pt and Pd, or an oxide or oxides of the metal(s),
- an oxide or oxides of one or two or more metal(s) selected from a second metal group M2 consisting of lanthanoid-based metals, which second metal group M2 is not Ce, and
- an oxide or oxides of one or two or more metal(s) selected from a third metal group M3 consisting of Zn, Sn, Zr, Ga and Ge;
- C) a transparent electroconductive glass substrate, comprising:
- a glass substrate,
- a transparent electroconductive film which is formed over the glass substrate, is made mainly of indium oxide, and comprises one or two or more metal(s) selected from a first metal group M1 consisting of W, Mo, Ni, Pt and Pd, or an oxide or oxides of the metal(s), and an oxide or oxides of one or two or more metal(s) selected from a second metal group M2 consisting of lanthanoid-based metals, which second metal group M2 is not Ce, and
- a metal thin film which is formed over the glass substrate and is made mainly of Al or Ag;
- D) a transparent electroconductive glass substrate, comprising:
- a glass substrate,
- a transparent electroconductive film which is formed over the glass substrate, is made mainly of indium oxide, and comprises one or two or more metal(s) selected from a first metal group M1 consisting of W, Mo, Ni, Pt and Pd, or an oxide or oxides of the metal(s), an oxide or oxides of one or two or more metal(s) selected from a second metal group M2 consisting of lanthanoid-based metals, which second metal group M2 is not Ce, and an oxide or oxides of one or two or more metal(s) selected from a third metal group M3 consisting of Zn, Sn, Zr, Ga and Ge, and
- a metal thin film which is formed over the glass substrate and is made mainly of Al or Ag;
- and wherein in said product either
- I) the oxide or oxides of one or two or more metal(s) selected from the second metal group M2 is not an oxide of La;
- or
- II) the oxide or oxides of one or two or more metal(s) selected from the second metal group M2 is/are an oxide or oxides of one or more metals of Ho and Er.
16 more elements
A product selected from the group consisting of A) a transparent electroconductive film, B) a transparent electroconductive film, C) a transparent electroconductive glass substrate, and D) a transparent electroconductive glass substrate, wherein
- A) a transparent electroconductive film, which is made mainly of indium oxide, and comprises:
- one or two or more metal(s) selected from a first metal group M1 consisting of W, Mo, Ni, Pt and Pd, or an oxide or oxides of the metal(s), and
- an oxide or oxides of one or two or more metal(s) selected from a second metal group M2 consisting of lanthanoid-based metals, which second metal group M2 is not Ce;
- B) a transparent electroconductive film, which is made mainly of indium oxide, and comprises:
- one or two or more metal(s) selected from a first metal group M1 consisting of W, Mo, Ni, Pt and Pd, or an oxide or oxides of the metal(s),
- an oxide or oxides of one or two or more metal(s) selected from a second metal group M2 consisting of lanthanoid-based metals, which second metal group M2 is not Ce, and
- an oxide or oxides of one or two or more metal(s) selected from a third metal group M3 consisting of Zn, Sn, Zr, Ga and Ge;
- C) a transparent electroconductive glass substrate, comprising:
- a glass substrate,
- a transparent electroconductive film which is formed over the glass substrate, is made mainly of indium oxide, and comprises one or two or more metal(s) selected from a first metal group M1 consisting of W, Mo, Ni, Pt and Pd, or an oxide or oxides of the metal(s), and an oxide or oxides of one or two or more metal(s) selected from a second metal group M2 consisting of lanthanoid-based metals, which second metal group M2 is not Ce, and
- a metal thin film which is formed over the glass substrate and is made mainly of Al or Ag;
- D) a transparent electroconductive glass substrate, comprising:
- a glass substrate,
- a transparent electroconductive film which is formed over the glass substrate, is made mainly of indium oxide, and comprises one or two or more metal(s) selected from a first metal group M1 consisting of W, Mo, Ni, Pt and Pd, or an oxide or oxides of the metal(s), an oxide or oxides of one or two or more metal(s) selected from a second metal group M2 consisting of lanthanoid-based metals, which second metal group M2 is not Ce, and an oxide or oxides of one or two or more metal(s) selected from a third metal group M3 consisting of Zn, Sn, Zr, Ga and Ge, and
- a metal thin film which is formed over the glass substrate and is made mainly of Al or Ag;
- and wherein in said product the oxide or oxides of one or two or more metal(s) selected from the second metal group M2 is not an oxide of La.
13 more elements
A product selected from the group consisting of A) a transparent electroconductive film, B) a transparent electroconductive film, C) a transparent electroconductive glass substrate, and D) a transparent electroconductive glass substrate, wherein
- A) a transparent electroconductive film, which is made mainly of indium oxide, and comprises:
- one or two or more metal(s) selected from a first metal group M1 consisting of W, Mo, Ni, Pt and Pd, or an oxide or oxides of the metal(s), and
- an oxide or oxides of one or two or more metal(s) selected from a second metal group M2 consisting of lanthanoid-based metals, which second metal group M2 is not Ce;
- B) a transparent electroconductive film, which is made mainly of indium oxide, and comprises:
- one or two or more metal(s) selected from a first metal group M1 consisting of W, Mo, Ni, Pt and Pd, or an oxide or oxides of the metal(s),
- an oxide or oxides of one or two or more metal(s) selected from a second metal group M2 consisting of lanthanoid-based metals, which second metal group M2 is not Ce, and
- an oxide or oxides of one or two or more metal(s) selected from a third metal group M3 consisting of Zn, Sn, Zr, Ga and Ge;
- C) a transparent electroconductive glass substrate, comprising:
- a glass substrate,
- a transparent electroconductive film which is formed over the glass substrate, is made mainly of indium oxide, and comprises one or two or more metal(s) selected from a first metal group M1 consisting of W, Mo, Ni, Pt and Pd, or an oxide or oxides of the metal(s), and an oxide or oxides of one or two or more metal(s) selected from a second metal group M2 consisting of lanthanoid-based metals, which second metal group M2 is not Ce, and
- a metal thin film which is formed over the glass substrate and is made mainly of Al or Ag;
- D) a transparent electroconductive glass substrate, comprising:
- a glass substrate,
- a transparent electroconductive film which is formed over the glass substrate, is made mainly of indium oxide, and comprises one or two or more metal(s) selected from a first metal group M1 consisting of W, Mo, Ni, Pt and Pd, or an oxide or oxides of the metal(s), an oxide or oxides of one or two or more metal(s) selected from a second metal group M2 consisting of lanthanoid-based metals, which second metal group M2 is not Ce, and an oxide or oxides of one or two or more metal(s) selected from a third metal group M3 consisting of Zn, Sn, Zr, Ga and Ge, and
- a metal thin film which is formed over the glass substrate and is made mainly of Al or Ag;
- and wherein in said product the oxide or oxides of one or two or more metal(s) selected from the second metal group M2 is/are an oxide or oxides of one or more metals of Ho and Er.
13 more elements
Dependencies are inferred from the claim text.