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US 8,507,080 B2Granted
Thermoplastic-thermosetting composite and method for bonding a thermoplastic material to a thermosetting material
AssigneeInfineon Technologies AG
InventorsJoachim Mahler, Alfred Haimerl, Wolfgang Schober, Michael Bauer, Angela Kessler
Life of this patent
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Abstract
Composite with a first part composed of a thermoset material and with a second part composed of a thermoplastic material, and with an adhesion-promoter layer located between these, where the first part has been bonded by way of the adhesion-promoter layer to the second part, and where the adhesion-promoter layer comprises pyrolytically deposited semiconductor oxides and/or pyrolytically deposited metal oxides.
Claims14
A semiconductor component, comprising:
- a semiconductor chip having a first side and a second side, the second side having contact areas thereon;
- a chip island having the first side of the semiconductor chip mounted hereon;
- a flat conductor including inner and outer portions, the inner portions having contacts;
- bonding wires electrically connecting the contact areas on the second side of the semiconductor chip to the contacts of the flat conductor;
- a first part including a thermoset material embedding the semiconductor chip, the chip island, the bonding wires, and the inner portion of the flat conductor to form a semiconductor component casing;
- a second part including a thermoplastic material embedding the first part to form a casing retainer on the semiconductor component casing;
- and
- a porous adhesion-promoter layer located between the first and second parts, wherein the first part is bonded by the adhesion-promoter layer to the second part, and wherein the adhesion-promoter layer includes at least one of pyrolytically deposited semiconductor oxides and/or pyrolytically deposited metal oxides such that a first portion of the adhesion-promoter layer covers the first part with a pore-free fully compact morphology and the porosity of the adhesion-promoter layer gradually increases such that a second portion of the adhesion-promoter layer adjacent the second part has microporous morphology, and wherein the average thickness D of the adhesion-promoter layer is in the range 5 nm≦D≦40 nm.
5 more elements
A process for production of a semiconductor component, comprising:
- providing a semiconductor chip having a first side and a second side, the second side having contact areas thereon;
- mounting the first side of the semiconductor chip to a chip island;
- electrically connecting the contact areas on the second side of the semiconductor chip to contacts of a flat conductor with bonding wires;
- embedding the semiconductor chip, the chip island, the bonding wires, and an inner portion of the flat conductor in a thermoset material to form a semiconductor component casing;
- applying a porous adhesion-promoter layer by pyrolytic deposition to an outer surface of the semiconductor component casing, wherein the adhesion-promoter layer includes semiconductor oxides and/or metal oxides;
- embedding the semiconductor component casing in a thermoplastic casing retainer material, so that the adhesion-promoter layer has been arranged between the thermoset material and the thermoplastic material;
- heating the thermoplastic material and the thermoset material to generate a bond between the thermoplastic material and the thermoset material such that a first portion of the adhesion-promoter layer covers the thermoset material with a pore-free fully compact morphology and the porosity of the adhesion-promoter layer gradually increases such that a second portion of the adhesion-promoter layer adjacent the thermoplastic material has microporous morphology;
- wherein the application thickness D of the adhesion-promoter layer is in the range 5 nm≦D≦40 nm, and wherein the first portion of the adhesion-promoter layer is in the range of 5 to 10 nm of the adhesion-promoter layer.
5 more elements
Dependencies are inferred from the claim text.