Back to results
US 8,507,030 B2Granted
Method of fabricating metal oxide film on carbon nanotube and method of fabricating carbon nanotube transistor using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYo-seb Min, Eun-ju Bae, Un-jeong Kim, Eun-hong Lee
Life of this patent
Estimating the term…
Abstract
Provided is a method of forming a metal oxide film on a CNT and a method of fabricating a carbon nanotube transistor using the same. The method includes forming chemical functional group on a surface of the CNT and forming the metal oxide film on the CNT on which the chemical functional group is formed.
Claims12
A method of forming a metal oxide film on a carbon nanotube (CNT), comprising:
- forming a chemical functional group surrounding a sidewall of the CNT, the chemical functional group including a hydroxyl group;
- and
- forming the metal oxide film on the CNT on which the chemical functional group is formed,
- the forming of the chemical functional group surrounding the sidewall including simultaneously supplying a precursor of the metal oxide film and water into a reaction chamber.
1 more element
A method of fabricating a carbon nanotube transistor, comprising:
- forming a carbon nanotube (CNT) channel on a substrate;
- forming a chemical functional group surrounding a sidewall of the CNT channel, the chemical functional group including a hydroxyl group;
- forming a metal oxide film on the CNT channel on which the chemical functional group is formed;
- and
- forming a gate on the metal oxide film,
- the forming of the chemical functional group surrounding the sidewall including simultaneously supplying a precursor of the metal oxide film and water into a reaction chamber.
3 more elements
Dependencies are inferred from the claim text.