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US 8,506,882 B2Granted
High purity target manufacturing methods
AssigneeTosoh SMD, Inc.
InventorEugene Y. Ivanov
Life of this patent
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Abstract
A method for producing a high purity tungsten sputtering target. The method includes heat treating of high purity tungsten powder in order to consolidate it into a blank with density providing closed porosity. The consolidation may be achieved by hot pressing, HIP or any other appropriate method. Next, this plate is rolled to produce target blanks of approximate size and further increased density of the material. The method may be applicable to a variety of blanks including round shape target blanks, for example, consisting of tungsten, molybdenum, tantalum, hafnium, etc.
Claims4
Method of preparing a W sputter target comprising:
- a) providing a powder consisting essentially of W particles having a particle size of less than about 100 microns and a purity of at least 5Ns;
- b) hot isostatically pressing said particles at heated temperature conditions of from about 1,000° C. to 2,000° C. to form a plate having a density of greater than about 95% of the theoretical density;
- and
- c) thermomechanically rolling the plate material so that it has a density of above about 97.5% of the theoretical density by hot rolling said plate at a temperature of about 1400° C. to 1700° C. resulting in a thickness reduction of greater than about 40%.
1 more element
Dependencies are inferred from the claim text.