Cyclic self-limiting CMP removal and associated processing tool

A cyclic method of chemical mechanical polishing (CMP) a wafer having a surface, comprising:

• placing said wafer on a platen in a CMP apparatus which includes a polishing pad;
• performing a multi-step CMP comprising process, comprising the steps of:
• delivering a first chemical composition onto said surface of said wafer while on said platen for a first time duration, and
• without removing said wafer from said platen, delivering a second chemical composition different from said first chemical composition onto said surface of said wafer for a second time duration after said first time duration,
• performing a CMP removal process with contact of said polishing pad to said surface of said wafer using a slurry including said first chemical composition during said first time duration or said second chemical composition during said second time duration, and a non-polishing process without any contact of said polishing pad to said surface of said wafer using the other of said first chemical composition and said second chemical composition during the other of said first and said second time durations, and
• repeating said multi-step CMP comprising process a plurality of times on said wafer.