Pattern formation method
AssigneeKabushiki Kaisha Toshiba
InventorKenji Furusho
Life of this patent
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Abstract
A pattern is formed by: forming a first imprint mask layer on a processed member; forming a first imprint pattern of the first imprint mask layer using a first template; forming a second imprint mask layer made of a material having a different etching rate from the first imprint mask layer on the first imprint pattern; forming a second imprint pattern of the second imprint mask layer using a second template different from the first template; and etching the processed member using as a mask the second imprint mask layer on which the second imprint pattern is formed and the first imprint mask layer on which the first imprint pattern is formed.
Claims8
A pattern formation method for forming a trench comprising:
- forming a first imprint mask layer on a processed member;
- forming a first imprint pattern of the first imprint mask layer using a first template;
- forming a second imprint mask layer made of a material comprising a different etching rate from the first imprint mask layer on the first imprint pattern, when etched with the same etching process;
- forming a second imprint pattern of the second imprint mask layer using a second template different from the first template;
- and
- etching the processed member using as a mask the second imprint mask layer having the second imprint pattern and the first imprint mask layer having the first imprint pattern is formed,
- wherein an etching rate of the first imprint mask layer is higher than that of the second imprint mask layer, and the second imprint pattern is a reversed pattern of the first imprint pattern.
Dependencies are inferred from the claim text.