Cross flow CVD reactor
AssigneeToshiba Techno Center Inc.
InventorsVahid S. Moshtagh, Heng Liu, Jeffery Ramer, Michael Solomensky
Life of this patent
Estimating the term…
Abstract
A cross flow chemical vapor deposition chamber can comprise an inlet duct having a generally rectangular cross-section and an outlet duct having a generally rectangular cross-section. The rectangular inlet duct and the rectangular outlet duct can facilitate laminar flow of reactant gases over a susceptor. Movable partitions can be configured to define a plurality of zones within the chamber. Each zone can contain a different reactant gas, concentration of reactant gas, and/or flow rate of reactant gas. Enhanced laminar flow can be provided, undesirable depletion of reactant gas can be mitigated, and enhanced control of reactant gases can be facilitated.
Claims14
A chemical vapor deposition reactor comprising:
- a chamber;
- a susceptor disposed within the chamber;
- an inlet duct configured to provide gas to the chamber;
- an outlet duct configured to exhaust gas from the chamber;
- a lid configured to seal the chamber;
- at least one movable partition configured to define a longitudinal row of individually controllable deposition zones within the chamber, wherein the deposition zones are configured to have different sizes in response to locations of the partitions;
- whereas at least one of the partitions is curved;
- and
- wherein the inlet duct, the outlet duct, and the partition(s) are configured to facilitate laminar flow of gasses in one direction along the longitudinal row of zones and over the susceptor during vapor deposition.
Dependencies are inferred from the claim text.