Back to results
US 8,506,705 B2Granted
Method for manufacturing nitride single crystal
AssigneeNGK Insulators, Ltd.
InventorsMikiya Ichimura, Katsuhiro Imai, Makoto Iwai, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura, Yasuo Kitaoka
Life of this patent
Estimating the term…
Abstract
A nitride single crystal is produced on a seed crystal substrate 5 in a melt containing a flux and a raw material of the single crystal in a growing vessel 1. The melt 2 in the growing vessel 1 has temperature gradient in a horizontal direction. In growing a nitride single crystal by flux method, adhesion of inferior crystals onto the single crystal is prevented and the film thickness of the single crystal is made constant.
Claims7
A method of producing a nitride single crystal, said method comprising:
- immersing a seed crystal substrate having a growth surface in a melt comprising a flux and a raw material for the single crystal in a growth vessel to grow the nitride single crystal on the growth surface of the seed crystal substrate, wherein a temperature gradient is provided in a horizontal direction in the melt in the growth vessel,
- wherein the gas-liquid interface of the melt is substantially parallel with the growth surface of the seed crystal substrate.
Dependencies are inferred from the claim text.