Methods of fabricating multilayer substrates

A method of fabricating a multilayer semiconductor-on-insulator substrate including an active layer, the method comprising:

• forming at least one electronic component on or in at least one of a front face of a donor substrate and a front face of a receiver substrate;
• providing a layer of oxide on at least one of the front face of the donor substrate and the front face of the receiver substrate;
• bonding the front face of the donor substrate to the front face of the receiver substrate by molecular adhesion to form a stack;
• applying a heat treatment to the stack to consolidate a bond interface between the donor substrate and the receiver substrate;
• removing material of the donor substrate from a back face of the donor substrate;
• trimming an annular periphery of the donor substrate and at least a portion of an annular periphery of the receiver substrate;
• and
• etching the back face and the annular periphery of the donor substrate and the at least a portion of the annular periphery of the receiver substrate subsequent to removing material of the donor substrate from the back face of the donor substrate and trimming the annular periphery of the donor substrate and the at least a portion of the annular periphery of the receiver substrate, wherein a surface of the active layer is not exposed prior to etching the back face and the annular periphery of the donor substrate and the at least a portion of the annular periphery of the receiver substrate during the trimming of the periphery of the donor substrate and the removal of material of the donor substrate from the back face of the donor substrate.

A method of fabricating a bulk multilayer semiconductor-on-insulator substrate including an active layer, the method comprising:

• forming at least one electronic component on or in at least one of a front face of a bulk donor substrate and a front face of a bulk receiver substrate;
• providing a layer of oxide on at least one of the front face of the bulk donor substrate and the front face of the bulk receiver substrate;
• bonding the front face of the bulk donor substrate to the front face of the bulk receiver substrate by molecular adhesion to form a stack;
• applying a heat treatment to the stack to consolidate a bond interface between the bulk donor substrate and the bulk receiver substrate;
• grinding a back face of the bulk donor substrate;
• trimming an annular periphery of the bulk donor substrate and at least a portion of an annular periphery of the bulk receiver substrate;
• and
• etching the back face and the annular periphery of the bulk donor substrate and the at least a portion of the annular periphery of the bulk receiver substrate subsequent to removing material of the bulk donor substrate from the back face of the bulk donor substrate and trimming the annular periphery of the bulk donor substrate and the at least a portion of the annular periphery of the bulk receiver substrate, wherein a surface of the active layer is not exposed prior to etching the back face and the annular periphery during the trimming of the annular periphery of the bulk donor substrate and the at least a portion of the annular periphery of the bulk receiver substrate.