High efficiency driving circuit

A high efficiency driving circuit, comprising:

• a third P-type metal-oxide-semiconductor transistor having a first terminal for receiving a first voltage, a second terminal, and a third terminal for coupling to a load;
• a first P-type metal-oxide-semiconductor transistor having a first terminal for receiving the first voltage, a second terminal for receiving a first control signal, and a third terminal coupled to the second terminal of the third P-type metal-oxide-semiconductor transistor;
• a second P-type metal-oxide-semiconductor transistor having a first terminal for receiving the first voltage, a second terminal coupled to the second terminal of the third P-type metal-oxide-semiconductor transistor, and a third terminal;
• a first N-type metal-oxide-semiconductor transistor having a first terminal coupled to the third terminal of the first P-type metal-oxide-semiconductor transistor, a second terminal for receiving a second control signal, and a third terminal;
• a second N-type metal-oxide-semiconductor transistor having a first terminal coupled to the third terminal of the first N-type metal-oxide-semiconductor transistor, a second terminal, and a third terminal coupled to ground;
• a current source having a first terminal for receiving a second voltage, and a second terminal, wherein the current source is used for providing first current;
• a third N-type metal-oxide-semiconductor transistor having a first terminal coupled to the second terminal of the current source, a second terminal coupled to the first terminal of the third N-type metal-oxide-semiconductor transistor and the second terminal of the second N-type metal-oxide-semiconductor transistor, and a third terminal coupled to the ground;
• a fourth N-type metal-oxide-semiconductor transistor having a first terminal coupled to the second terminal of the current source, a second terminal, and a third terminal;
• a fifth N-type metal-oxide-semiconductor transistor having a first terminal coupled to the third terminal of the second P-type metal-oxide-semiconductor transistor, a second terminal coupled to the first terminal of the fifth N-type metal-oxide-semiconductor transistor and the second terminal of the fourth N-type metal-oxide-semiconductor transistor, and a third terminal coupled to the ground;
• a first resistor having a first terminal for receiving the first voltage, and a second terminal coupled to the second terminal of the third P-type metal-oxide-semiconductor transistor;
• and
• a second resistor having a first terminal coupled to the third terminal of the fourth N-type metal-oxide-semiconductor transistor, and a second terminal coupled to the ground.