Semiconductor device member, production method of semiconductor-device-member formation liquid and semiconductor device member, and semiconductor-device-member formation liquid, phosphor composition, semiconductor light-emitting device, lighting system and image display system using the same

A semiconductor device member having a siloxane skeletal structure serving as a basic skeleton, a silicon content of 25 weight % or more, and a ratio of (total area of peaks of the chemical shift of −40 ppm or more and 0 ppm or less)/(total area of peaks of the chemical shift of less than −40 ppm) in a solid Si-nuclear magnetic resonance spectrum of 3 or more and 200 or less,

• wherein the semiconductor device member has a weight loss at the time of heating of 50 weight % or lower, and a ratio of peeling of 30% or lower, wherein the weight loss is measured by
• obtaining a 10-mg fragment of said semiconductor device member, heating said fragment from 35° C. to 500° C. at a temperature rising rate of 10° C./min under 200-ml/min flow of air, and measuring the weightloss with a thermogravimetric/differential thermal analyzer, and wherein the ratio of pealing is measured by
• dropping a semiconductor-device-member formation liquid into a silver-plated copper cup having a diameter of 9 mm and a depth at the recess of 1 mm curing the formation liquid to obtain the semiconductor device member,
• letting the obtained semiconductor device member absorb moisture in an atmosphere of 85-° C. temperature and 85-% humidity for 20 hours,
• heating the semiconductor device member that absorbed moisture from room temperature to 260° C. in 50 seconds, and then keeping the semiconductor device member at 260° C. for 10 seconds,
• cooling said heated semiconductor device member to room temperature, and observing the existence or the nonexistence of a peeling of said semiconductor device member from the above-mentioned copper cup both by visual inspection and with a microscope, and
• determining the ratio of peeling of said semiconductor device member by repeating the above operations on 10 different samples of said semiconductor device member.