Semiconductor device with two metal oxide films and an oxide semiconductor film
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first metal oxide film on and in contact with the insulating film; an oxide semiconductor film partly in contact with the first metal oxide film; source and drain electrodes electrically connected to the oxide semiconductor film; a second metal oxide film partly in contact with the oxide semiconductor film; a gate insulating film on and in contact with the second metal oxide film; and a gate electrode over the gate insulating film.
Claims24
A semiconductor device comprising:
- an insulating film;
- a first metal oxide film on and in contact with the insulating film;
- an oxide semiconductor film in contact with the first metal oxide film;
- source and drain electrodes in contact with the oxide semiconductor film;
- a second metal oxide film in contact with the oxide semiconductor film;
- a gate insulating film on and in contact with the second metal oxide film;
- and
- a gate electrode over the gate insulating film.
A semiconductor device comprising:
- a first metal oxide film including gallium over a substrate;
- an oxide semiconductor film over and in contact with the first metal oxide film;
- source and drain electrodes over and in contact with the oxide semiconductor film;
- a second metal oxide film including gallium over and in contact with the oxide semiconductor film and the source and drain electrodes;
- a gate insulating film over and in contact with the second metal oxide film;
- and
- a gate electrode over the gate insulating film.
A semiconductor device comprising:
- a first metal oxide film including gallium over a substrate;
- an oxide semiconductor film over and in contact with the first metal oxide film;
- source and drain electrodes over and in contact with the oxide semiconductor film;
- a second metal oxide film including gallium over and in contact with the oxide semiconductor film and the source and drain electrodes;
- a gate insulating film over and in contact with the second metal oxide film;
- and
- a gate electrode over the gate insulating film,
- wherein the first metal oxide film and the second metal oxide film each contain a constituent element of the oxide semiconductor film.
A semiconductor device comprising:
- a first metal oxide film including gallium over a substrate;
- an oxide semiconductor film over and in contact with the first metal oxide film;
- source and drain electrodes over and in contact with the oxide semiconductor film;
- a second metal oxide film including gallium over and in contact with the oxide semiconductor film and the source and drain electrodes;
- a gate insulating film over and in contact with the second metal oxide film;
- and
- a gate electrode over the gate insulating film,
- wherein the first metal oxide film and the second metal oxide film each contain a constituent element of the oxide semiconductor film,
- wherein the second metal oxide film includes a depression portion between the source electrode and the drain electrode.
Dependencies are inferred from the claim text.