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US 8,486,837 B2Granted
Polishing slurry for metal, and polishing method
AssigneeHitachi Chemical Company, Ltd.
InventorsHiroshi Ono, Katsuyuki Masuda, Masanobu Habiro
Life of this patent
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Abstract
A polishing slurry for metal comprises an oxidizer, a metal oxide dissolving agent, a metal inhibitor, and water, wherein the metal inhibitor is at least one of a compound having an amino-triazole skeleton and a compound having an imidazole skeleton. The use of the polishing slurry for metal makes it possible to raise the polishing speed sufficiently while keeping the etching speed low, restrain the generation of corrosion of the surface of a metal and dishing, and form a metal-film-buried pattern having a high reliability in the process of formation of wiring of semiconductor devices.
Claims18
A method for polishing a substrate having a first metal film and a second metal film,
- by supplying a polishing slurry for metal onto a polishing cloth of a polishing table while moving the polishing table and the substrate relatively in the state that the substrate is pressed against the polishing cloth,
- wherein the first metal film is one or more selected from copper, copper alloys, copper oxides, and oxides of copper alloys, and the second metal film is one or more selected from tantalum and compounds thereof, titanium and compounds thereof, and tungsten and compounds thereof,
- wherein the polishing slurry for metal comprises an oxidizer, a metal oxide dissolving agent, a metal inhibitor, and water, and
- wherein the metal inhibitor comprises:
- a compound having an amino-triazole skeleton wherein an amino group is bonded to carbon in a triazole ring;
- and
- a compound having an imidazole skeleton and represented by the following general formula (I):
- wherein R1, R2 and R3 each independently represent a hydrogen atom, an amino group, or a C1-C12 alkyl chain and provided that the case that all of R1, R2 and R3 are hydrogen atoms is excluded, and
- wherein the substrate undergoes a first polishing process and a second polishing process;
- wherein the substrate is polished with a polishing slurry in the first polishing process;
- and then
- in the second polishing process the polishing slurry for metal polishes the first metal film and the second metal film so as to achieve a desired pattern.
9 more elements
A method for polishing a substrate having a first metal film and a second metal film,
- by supplying a polishing slurry for metal onto a polishing cloth of a polishing table while moving the polishing table and the substrate relatively in the state that the substrate is pressed against the polishing cloth,
- wherein the first metal film is one or more selected from copper, copper alloys, copper oxides, and oxides of copper alloys, and the second metal film is one or more selected from tantalum and compounds thereof, titanium and compounds thereof, and tungsten and compounds thereof,
- wherein the polishing slurry for metal comprises an oxidizer, a metal oxide dissolving agent, a metal inhibitor, and water, and
- wherein the metal inhibitor comprises:
- a compound having a triazole skeleton having no amino group;
- and
- a compound having an imidazole skeleton and represented by the following general formula (I):
- wherein R1, R2 and R3 each independently represent a hydrogen atom, an amino group, or a C1-C12 alkyl chain and provided that the case that all of R1, R2 and R3 are hydrogen atoms is excluded, and
- wherein the substrate undergoes a first polishing process and a second polishing process;
- wherein the substrate is polished with a polishing slurry in the first polishing process;
- and then
- in the second polishing process the polishing slurry for metal polishes the first metal film and the second metal film so as to achieve a desired pattern.
9 more elements
A method for polishing a substrate having a first metal film and a second metal film,
- by supplying a polishing slurry for metal onto a polishing cloth of a polishing table while moving the polishing table and the substrate relatively in the state that the substrate is pressed against the polishing cloth,
- wherein the first metal film is one or more selected from copper, copper alloys, copper oxides, and oxides of copper alloys, and the second metal film is one or more selected from tantalum and compounds thereof, titanium and compounds thereof, and tungsten and compounds thereof,
- wherein the polishing slurry for metal comprises an oxidizer, a metal oxide dissolving agent, a metal inhibitor, and water, and
- wherein the metal inhibitor comprises:
- a compound having an amino-triazole skeleton wherein an amino group is bonded to carbon in a triazole ring;
- and
- a compound having a triazole skeleton having no amino group, and
- wherein the substrate undergoes a first polishing process and a second polishing process;
- wherein the substrate is polished with a polishing slurry in the first polishing process;
- and then
- in the second polishing process the polishing slurry for metal polishes the first metal film and the second metal film so as to achieve a desired pattern.
8 more elements
Dependencies are inferred from the claim text.