Magnetic spin based photonic/plasmonic devices
AssigneesThe United States of America as represented by the Secretary of the Navy, University of Alberta
InventorsMark B Johnson, Abdulhakem Elezzabi, Kenneth J. Chau
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Abstract
A photonic/plasmonic device is disclosed that uses a ferroelectric material and its magnetization state in order to affect the physical properties of electromagnetic waves. The magnetization state of the ferromagnetic material may either be zero or nonzero. When the magnetization state of the ferromagnetic material is non-zero physical properties of the electromagnetic waves are altered. This effect can be used to make switches and the like.
Claims12
A photonic/plasmonic monolayer device, comprising:
- a source of surface plasmon waves;
- and
- a single ferromagnetic layer having two characteristic states, a first state where the layer has zero net magnetization and a second state where the layer has uniform magnetization and at least some orientation, and wherein a property of a surface plasmon wave is altered by the magnetization state.
A photonic/plasmonic monolayer device, comprising:
- a source of surface plasmon waves;
- and
- a single ferromagnetic layer having a property selected from the group consisting of an anisotropic magneto-resistance and a magneto impedance and having two characteristic states, a first state where the layer has zero net magnetization and a second state where the layer has uniform magnetization and at least some orientation, and wherein a property of a surface plasmon wave is altered by the magnetization state.
A photonic/plasmonic monolayer device, comprising:
- a source of surface plasmon waves;
- and
- a single ferromagnetic layer having a surface and having a property selected from the group consisting of an anisotropic magneto-resistance and a magneto impedance, whereby when a surface plasmon is transmitted across the surface of the single ferromagnetic layer, the electric and magnetic fields of the surface plasmon penetrate into the layer's surface, and whereby the layer has two characteristic states, a first state where the layer has zero net magnetization and a second state where the layer has uniform magnetization and at least some orientation.
Dependencies are inferred from the claim text.