Apparatus and method for multi-directionally scanning a beam of charged particles
OwnerJohn Ruffellinventor
Life of this patent
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Abstract
Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.
Claims21
An apparatus for multi-directionally scanning a beam of charged particles across a target surface, comprising:
- a beam source for producing a beam of charged particles along an incident beam axis;
- a beam scanner for scanning the beam in a first direction across the target surface;
- a beam deflector disposed along the incident beam axis, for deflecting the beam of charged particles;
- and
- an actuator coupled with the beam deflector, for moving the beam deflector in a second direction, to provide beam scanning in the second direction across the target surface.
An apparatus for multi-directional charged particle beam scanning, comprising:
- a beam source for producing a beam of charged particles along an incident beam axis;
- a beam deflector for deflecting the beam;
- a linear actuator for moving the beam deflector along the incident beam axis;
- and
- a rotation drive mechanism coupled with the beam deflector, for rotating the beam deflector about the incident beam axis.
A method for multi-directional scanning of a charged particle beam, comprising the steps of:
- generating a beam of charged particles along an incident beam axis;
- scanning the beam of charged particles in a first direction;
- deflecting the beam of charged particles towards a wafer surface, using a beam deflector;
- and
- moving the beam deflector to scan the beam of charged particles across the wafer surface, in a second direction.
Dependencies are inferred from the claim text.