A read sensor for a read transducer is fabricated. The read transducer has field and device regions. A read sensor stack is deposited. A mask covering part of the stack corresponding to the read sensor is provided. The read sensor having inboard and outboard junction angles is defined from the stack in a track width direction. A critical junction (CJ) focused ion beam scan (FIBS) polishing that removes part of the read sensor based on the junction angles is performed. A hard bias structure is deposited and the transducer planarized. A remaining portion of the mask is removed. A stripe height mask covering part of the read sensor and hard bias structure in a stripe height direction is provided. The read sensor stripe height is defined. A tunneling magnetoresistance (TMR) FIBS polishing that removes part of the stack in the field region is performed. An insulating layer is provided.
Drawings
Claims13
A method for fabricating a read sensor on a substrate for a read transducer, the read transducer having a field region and a device region in which the read sensor resides, the method comprising:
depositing a read sensor stack including a plurality of layers on the substrate;
providing a mask on the read sensor stack, the mask having a pattern, the pattern covering a first portion of the read sensor stack corresponding to the read sensor, covering a second portion of the read sensor stack distal from the read sensor, and exposing a third portion of the read sensor stack between the first portion and the second portion of the read sensor stack;
defining the read sensor from the read sensor stack in a track width direction, the defining the read sensor including substantially removing the third portion of the read sensor stack, the read sensor having an inboard junction angle and an outboard junction angle;
performing a critical junction (CJ) focused ion beam scan (FIBS) polishing of the transducer, the CJ FIBS polishing removing a portion of the read sensor based on the inboard junction angle and the outboard junction angle;
depositing a hard bias structure;
planarizing the transducer;
removing a remaining portion of the mask;
providing a stripe height mask covering a fourth portion of the read sensor and a portion of the hard bias structure in a stripe height direction;
defining a stripe height of the read sensor from the read sensor stack;
performing a tunneling magnetoresistance (TMR) FIBS polishing of the field region of the transducer, the TMR FIBS polishing removing a remaining portion of the read sensor stack in the field region;
and
providing an insulating layer for electrically insulating the read transducer.
9 more elements
A method for fabricating a read sensor on a substrate for a read transducer, the read transducer having a field region and a device region in which the read sensor resides, the method comprising:
depositing a read sensor stack including a plurality of layers on the substrate;
depositing a hard mask layer on the read sensor stack, the hard mask layer having a plurality of hard mask layer thicknesses;
performing a hard mask focused ion beam scan (FIBS) polishing on the hard mask layer such that a greater amount of hard mask layer is removed for a greater hard mask layer thickness of the plurality of hard mask layer thickness;
providing a photoresist mask having a photoresist mask pattern on the hard mask layer;
and
transferring the photoresist mask pattern to the hard mask layer, forming a hard mask having a pattern, the pattern covering a first portion of the read sensor stack corresponding to the read sensor, covering a second portion of the read sensor stack distal from the read sensor, and exposing a third portion of the read sensor stack between the first portion and the second portion of the read sensor stack;
defining the read sensor in a track width direction from the read sensor stack, the defining the read sensor including substantially removing the third portion of the read sensor stack, the read sensor having an inboard junction angle and an outboard junction angle;
performing a critical junction (CJ) FIBS polishing of the transducer, the step of performing the CJ FIBS polishing including
measuring the inboard junction angle and the outboard junction angle;
and
scanning across the substrate while ion polishing such that the ion polishing removes a greater amount of read sensor for a smaller of the inboard junction angle and the outboard junction angle;
depositing an insulting layer on the read sensor;
depositing a hard bias structure after the step of depositing the insulating layer the hard bias structure including a magnetic layer and a capping layer;
planarizing the transducer;
removing a remaining portion of the hard mask, a top surface of the read sensor being exposed, a remaining portion of the hard bias structure having a notch corresponding to the read sensor therein, the notch having a notch height;
performing a notch FIBS polishing of the hard bias structure after the step of removing the remaining portion of the mask, the polishing FIBS polishing removing a portion of the hard bias structure to reduce the height of the notch, the step of performing the notch FIBS polishing further including
measuring at least a plurality of notch heights across the substrate;
scanning across the substrate while ion polishing such that a greater amount of the hard bias structure is removed for the greater notch height of the plurality of notch heights;
providing a stripe height mask covering a fourth portion of the read sensor and a portion of the hard bias structure in a stripe height direction;
defining a stripe height of the read sensor;
performing a TMR FIBS polishing of the field region of the transducer, the TMR FIBS polishing removing a remaining portion of the read sensor stack in the field region;
providing an insulating layer for electrically insulating the read transducer, the insulating layer having a plurality of insulating layer thicknesses;
performing a refill FIBS polishing of the insulating layer, the refill FIBS polishing removing a portion of the insulating layer based on the plurality of insulating layer thicknesses;
depositing a capping layer;
removing the stripe height mask;
and
performing an additional planarization.
24 more elements
A method for fabricating a read sensor on a substrate for a read transducer, the read transducer having a field region and a device region in which the read sensor resides, the method comprising:
depositing a read sensor stack including a plurality of layers on the substrate;
providing a stripe height mask covering a first portion of the read sensor stack in a stripe height direction;
defining a stripe height of the read sensor from the read sensor stack;
performing a tunneling magnetoresistance (TMR) focused ion beam scan (FIBS) polishing of the field region of the transducer, the TMR FIBS polishing removing a remaining portion of the read sensor stack in the field region;
providing an insulating layer that electrically insulates the read transducer;
removing the stripe height mask;
performing a planarization;
providing a mask on the on the read sensor stack, the mask having a pattern, the pattern covering a second portion of the read sensor stack corresponding to the read sensor, covering a third portion of the read sensor stack distal from the read sensor, and exposing a fourth portion of the read sensor stack between the second portion and the third portion of the read sensor stack;
defining the read sensor from the read sensor stack in a track width direction, the defining the read sensor including substantially removing the fourth portion of the read sensor stack, the read sensor having an inboard junction angle and an outboard junction angle for the read sensor track width;
performing a critical junction (CJ) FIBS polishing of the transducer, the CJ FIBS polishing removing a portion of the read sensor based on the inboard junction angle and the outboard junction angle;
6 Jan 2032Estimated · howhide20 years from earliest known nonprovisional domestic filing plus recorded patent term adjustment, including 190 days of adjustment. Maintenance-fee lapses, terminal disclaimers and statutory extensions have not been checked. The continuity chain may be incomplete; this is not an enforceability determination.
Using thin films: fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating,…
Life of this patent
About 5 years 2 months of term left · ends 6 Jan 2032 (estimated)
Priority30 Jun 2011
Granted9 Jul 2013
Today12 Oct 2026
Term ends6 Jan 2032
Priority30 Jun 2011
Granted9 Jul 2013
Term ends6 Jan 2032
Application filedUS 13/173,846
Assigned to Western Digital (Fremont), LLCassignment of assignor's interest
GrantedUS 8,480,911 B1
Assigned to Jpmorgan Chase Bank, N.A., AS Collateral Agentsecurity agreement
Assigned to U.S. Bank National Association, AS Collateral Agentsecurity agreement
Assigned to Jpmorgan Chase Bank, N.A., AS Collateral Agentsecurity agreement
Assigned to Western Digital (Fremont), LLCrelease of security interest
Assigned to Western Digital Technologies, Inc.assignment of assignor's interest
Assigned to Western Digital (Fremont), LLC, Western Digital Technologies, Inc.release of security interest at reel 038710 frame 0845
TodayWithin its term
Term endsEstimated, includes 190 days of adjustment
Description5,820 words
Summary1,064 words
#FIG. 1 depicts a conventional method 10 for fabricating a magnetoresistive sensor in magnetic recording technology applications. The method 10 typically commences after a conventional magnetoresistive or tunneling magnetoresistive (TMR) stack has been deposited. The conventional read sensor stack typically includes an antiferromagnetic (AFM) layer, a pinned layer, a nonmagnetic spacer layer, and a free layer. In addition, seed and/or capping layers may be used. The conventional magnetoresistive stack resides on an underlayer, which may be a substrate.
#The conventional method 10 commences by providing a conventional hard mask layer and a photoresist mask, via step 12. The conventional hard mask layer is typically a material such as SiC or diamond-like carbon (DLC). The conventional photoresist mask has the desired pattern, which is transferred to the conventional hard mask layer. The conventional photoresist mask covers the region from which the conventional magnetoresistive sensor is to be formed, as well as a portion of the transducer distal from the sensor. However, part of the device region adjoining the magnetoresistive sensor is left uncovered.
#A conventional hard mask is defined from the conventional hard mask layer, via step 14. Step 14 includes transferring the pattern from the conventional photoresist mask, for example through a reactive ion etch (RIE). The photoresist mask may also be removed in step 14.
Brief description of the drawings9 figures
#FIG. 1 is a flow chart depicting a conventional method for fabricating a read sensor for magnetic recording transducer.
#FIG. 2 depicts an ABS view of a conventional magnetic recording transducer.
#FIG. 3 depicts an exemplary embodiment of a method for fabricating a read sensor for a magnetic recording transducer.
Detailed description4,598 words
#FIG. 3 is an exemplary embodiment of a method 100 for providing magnetic recording transducer. For simplicity, some steps may be omitted. The method 100 is also described in the context of providing a single recording transducer. However, the method 100 may be used to fabricate multiple transducers at substantially the same time. The method 100 is also described in the context of particular layers. A particular layer may include multiple materials and/or multiple sub-layers. The method 100 also may start after formation of other portions of the magnetic recording transducer. For example, the method 100 may start after layers underlying the magnetoresistive sensor, such as a tunneling magnetoresistive (TMR) sensor have been fabricated.
#A read sensor stack is deposited on the substrate, via step 102. The magnetoresistive layers may include a pinning layer, a pinned layer, a nonmagnetic spacer layer, and a free layer. In addition, seed and/or capping layers may be used. The pinning layer may be an AFM or other layer configured to fix, or pin, the magnetization of the pinned layer. The pinned layer may be a synthetic antiferromagnetic (SAF) layer including magnetically coupled ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers may be termed pinned and reference sub-layers. The nonmagnetic spacer layer may be a conductive layer for a giant magnetoresistive structure, an insulator for a TMR structure, or may have another structure. The free layer is ferromagnetic and has a magnetization that is free to change in response to an external magnetic field, for example from a media. The free layer may have multiple sub-layers, as may the pinned and reference sub-layers. Further, the transducer may be considered to have a device region, in which the magnetoresistive structure is to be formed, and a field region distal from the magnetoresistive structure.
#A mask is provided on the read sensor stack, via step 104. The mask has a pattern that covers a first portion of the read sensor stack corresponding to the read sensor. A second portion of the read sensor stack distal from the read sensor is covered, while a third portion of the read sensor stack between the first portion and the second portion of the read sensor stack is exposed. In some embodiments, the mask is a hard mask. Step 104 may thus include depositing a hard mask layer, such as one or more of SiC and diamond-like carbon (DLC). A photoresist mask may then be provided on the hard mask layer. Pattern transfer and/or antireflective coating (ARC) layers may also be used. The pattern of the photoresist mask is then transferred to the hard mask layer, forming the mask.