Method for reading a nonvolatile memory by means of metadata and of a look-up table
AssigneeSTMicroelectronics (Rousset) SAS
InventorHubert Rousseau
Life of this patent
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AssigneeSTMicroelectronics (Rousset) SAS
InventorHubert Rousseau
Estimating the term…
An example method for writing and reading data in electrically erasable and programmable nonvolatile memory (EEPROM) cells may include writing, in erased blocks of a first memory zone, data each having a logical address defined in relation to a virtual memory; writing, in a second memory zone, metadata structures associated with the data present in the first memory zone, configuring, in a volatile memory zone, for each logical address of a data stored in the first memory zone, addresses of metadata structures comprising the logical address, reading the look-up table and then reading metadata structures that the look-up table designates, to find, from the logical address of a data, an address in the first memory zone of a block containing a valid data having the logical address.
A method for writing and reading data in electrically erasable and programmable nonvolatile memory cells, comprising:
An integrated circuit comprising:
A portable device comprising:
Dependencies are inferred from the claim text.