Semiconductor component and method of making the same
AssigneeInfineon Technologies AG
InventorsPatrick Baginski, Reinhold Bayerer, Holger Ruething, Daniel Domes
Life of this patent
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Abstract
One embodiment provides a semiconductor chip including a semiconductor body and a power semiconductor component integrated therein. The power semiconductor component includes a load electrode zone arranged on a first surface of the semiconductor body, a control electrode zone arranged on the first surface, the control electrode zone being electrically insulated from the load electrode zone, and a resistance track arranged on the load electrode zone and the control electrode zone. The resistance track ensures an electrical connection between the load electrode zone and the control electrode zone.
Claims8
A semiconductor chip comprising:
- a semiconductor body;
- and
- a power semiconductor component integrated therein, wherein the power semiconductor component comprises:
- a load electrode zone arranged on a first surface of the semiconductor body;
- a control electrode zone arranged on the first surface, the control electrode zone being electrically insulated from the load electrode zone;
- a resistance track arranged on the load electrode zone and the control electrode zone, the resistance track ensuring an electrical connection between the load electrode zone and the control electrode zone;
- a component electrode zone arranged on the first surface, the component electrode zone being electrically insulated from the load electrode zone and from the control electrode zone;
- a bonding connection that connects the control electrode zone to the component electrode zone or the load electrode zone to the component electrode zone with resistance, wherein the resistance track connects the component electrode zone to the load electrode zone or the component electrode zone to the control electrode zone;
- and
- an edge termination surrounding the electrode zones, wherein the resistance track is arranged along the edge termination.
A method for producing an integrated semiconductor circuit having at least one power semiconductor component and at least one resistance component, the method comprising:
- providing the power semiconductor component;
- fabricating the resistance component with a temperature-dependent resistance characteristic curve having two connecting lines;
- carrying out a functional test on the power semiconductor component to measure the internal temperature;
- and
- connecting one of the two connecting lines of the resistance component to a control electrode or a load electrode of the power semiconductor component;
- producing a bonding connection between a component electrode zone connected to the resistance component and the control electrode;
- and
- calibrating the resistance value of the resistance component with an electrical calibrating device.
Dependencies are inferred from the claim text.