Gallium nitride-based semiconductor laser device, and method for fabricating gallium nitride-based semiconductor laser device

A method for fabricating a GaN-based semiconductor laser device, comprising:

• a step of forming an n-type cladding layer of an n-type GaN-based semiconductor;
• a step of forming a first light guide layer of a GaN-based semiconductor on the n-type cladding layer;
• a step of forming an active layer of a GaN-based semiconductor on the first light guide layer;
• a step of forming a second light guide layer of a GaN-based semiconductor on the active layer;
• and
• a step of forming a p-type cladding layer of a p-type GaN-based semiconductor on the second light guide layer,
• wherein a lasing wavelength of the active layer is not less than 400 nm and not more than 550 nm,
• wherein the first and second light guide layers both contain indium,
• wherein each of indium compositions of the first and second light guide layers is not less than 2% and not more than 6%,
• wherein a film thickness of the first light guide layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the first light guide layer and a film thickness of the second light guide layer, and
• wherein the first light guide layer and the second light guide layer are in contact with the active layer.