Write-precompensation and variable write backoff
AssigneeSK hynix memory solutions inc.
InventorsJason Bellorado, Marcus Marrow
Life of this patent
Estimating the term…
Abstract
A technique for writing data is disclosed. The technique includes estimating an amount of additional voltage on a victim cell of a solid-state storage device caused by writing to one or more other cells in the solid-state storage device, determining a modified write value for the victim cell based at least in part on a desired value for the victim cell and the estimated amount of additional voltage, and writing the modified write value to the victim cell.
Claims21
A method for writing data, comprising:
- anticipating an amount of additional voltage on an affected cell of a solid-state storage device caused by a write to an interfering cell in the solid-state storage device;
- determining a modified write value for the affected cell based at least in part on a desired stored value for the affected cell and the anticipated amount of additional voltage;
- and
- prior to the write to the interfering cell which causes the additional voltage on the affected cell, writing the modified write value to the affected cell.
A system for writing data, comprising:
- a processor configured to:
- anticipate an amount of additional voltage on an affected cell of a solid-state storage device caused by a write to an interfering cell in the solid-state storage device;
- determine a modified write value for the affected cell based at least in part on a desired stored value for the affected cell and the anticipated amount of additional voltage;
- and
- prior to the write to the interfering cell which causes the additional voltage on the affected cell, write the modified write value to the affected cell;
- and
- a memory coupled to the processor and configured to provide the processor with instructions.
A computer program product for writing data, the computer program product being embodied in a non-transitory computer readable medium and comprising computer instructions for:
- anticipating an amount of additional voltage on an affected cell of a solid-state storage device caused by a write to an interfering cell in the solid-state storage device;
- determining a modified write value for the affected cell based at least in part on a desired stored value for the affected cell and the anticipated amount of additional voltage;
- and
- prior to the write to the interfering cell which causes the additional voltage on the affected cell, writing the modified write value to the affected cell.
Dependencies are inferred from the claim text.