Flash memory device configured to switch wordline and initialization voltages
AssigneeSamsung Electronics Co., Ltd.
InventorJae-woo Im
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AssigneeSamsung Electronics Co., Ltd.
InventorJae-woo Im
Estimating the term…
Provided is a flash memory device including a wordline voltage generating unit, a switch unit, a row decoder and a control circuit. The wordline voltage generating unit generates at least one wordline voltage for read operations of a multi-level cell in the flash memory device. The switch unit receives the at least one wordline voltage and an initialization voltage, and selectively outputs the at least one wordline voltage and the initialization voltage through a switching operation. The row decoder operates the wordline of the multi-level cell based on an output of the switch unit. The control circuit provides at least one control signal to the switch unit, which outputs the initialization voltage in at least one section of the read operation in response to the at least one control signal.
A flash memory device, comprising:
A flash memory device including a multi-level cell, comprising:
A flash memory device, comprising:
Dependencies are inferred from the claim text.