Non-uniform switching based non-volatile magnetic based memory

A non-uniform switching based non-volatile magnetic memory element that is adapted to store information based on the direction of magnetization thereof when current is applied, the non-uniform switching based non-volatile magnetic memory element comprising:

• a fixed layer having a magnetic moment that is fixed in direction;
• a barrier layer formed on top of the fixed layer;
• a first free layer formed on top of the barrier layer;
• a non-uniform switching layer (NSL) formed on top of the first free layer;
• and
• a second free layer formed on top of the NSL, the first free layer, the NSL, and the second free layer, the first and second free layer each having a magnetic moment that switches in direction relative to that of the fixed layer to store information in the non-uniform switching based non-volatile magnetic memory element, wherein when no switching current is applied to the second free layer, the net magnetization moment of the first and second free layers is aligned in a predetermined direction and the second free layer includes seeding areas that are scattered throughout the second free layer, the seeding areas each having a direction of magnetization moment, and when switching current is applied to the second free layer, the direction of magnetization moment of most of the seeding areas switches to a direction opposite to the predetermined direction, and when the switching current is increased, the seeding areas grow out to fuse to each other thereby leading to an avalanche type of switching to cause switching of the direction of the net magnetic moment of the first and second free layers.