Magnetic memory cell and magnetic random access memory

An operation method of a magnetic random access memory, wherein said magnetic random access memory comprises a magnetic memory cell, said magnetic memory cell comprises a magnetic recording layer which is a ferromagnetic layer, and a pinned layer connected with said magnetic recording layer through a non-magnetic layer, said magnetic recording layer comprises a magnetization inversion region provided to overlap said pinned layer and having a domain wall being moved, a first magnetization fixed region connected with a first boundary of said magnetization inversion region and having a magnetization whose orientation is fixed to the first direction, and a second magnetization fixed region connected with a second boundary of said magnetization inversion region and having a magnetization whose orientation is fixed to a second direction, and the first direction is parallel or anti-parallel to the magnetization orientation of said pinned layer, said operation method comprising:

• moving the domain wall to said first boundary in said magnetic recording layer by applying a first write current from said first magnetization fixed region to said second magnetization fixed region in case of writing a first data;
• and
• moving said domain wall to said second boundary by applying a second write current from said second magnetization fixed region to said first magnetization fixed region in case of writing a second data.