Radio frequency switch circuit
AssigneesSamsung Electro-Mechanics Co., Ltd., Korea Advanced Institute of Science and Technology
InventorsYu Sin Kim, Youn Suk Kim, Dong Hyun Baek, Sun Woo Yoon
Life of this patent
Estimating the term…
Loading patent…
AssigneesSamsung Electro-Mechanics Co., Ltd., Korea Advanced Institute of Science and Technology
InventorsYu Sin Kim, Youn Suk Kim, Dong Hyun Baek, Sun Woo Yoon
Estimating the term…
An RF switch circuit includes an RF switch including a first NMOS switch formed on a chip substrate, a switch controller including a second NMOS switch and a PMOS switch formed on the substrate, for controlling the RF switch, and a limiter including a deep N-type well diode formed on the substrate, for limiting an RF signal level transferred from the RF switch to the switch controller through the substrate. The first NMOS switch includes a first N-type terminal formed on a deep N-type well substrate formed on the substrate, for receiving a driving power through a first floating resistor, a P-type terminal for receiving a body power through a second floating resistor, and two second N-type terminals for receiving a gate power through a third floating resistor. The P-type and two second N-type terminals are formed on a P-type substrate formed on the deep N-type well substrate.
A radio frequency (RF) switch circuit, comprising:
Dependencies are inferred from the claim text.