Semiconductor device and method of forming base substrate with recesses for capturing bumped semiconductor die

A method of making a semiconductor device, comprising:

• providing a base substrate
• including a plurality of recesses formed in a first surface of the base substrate;
• forming a first conductive layer into first recesses of the plurality of recesses;
• forming a second conductive layer over a second surface of the base substrate opposite the first recesses;
• providing a first semiconductor die including a plurality of bumps formed over a surface of the first semiconductor die;
• disposing the first semiconductor die over the base substrate with the bumps partially disposed within the first recesses over the first conductive layer;
• and
• removing a portion of the base substrate from the second surface between the second conductive layer down to second recesses of the plurality of recesses while retaining a portion of the base substrate to form electrically isolated base leads for the bumps.

A method of making a semiconductor device, comprising:

• providing a base substrate
• including a plurality of recesses formed in a first surface of the base substrate;
• forming a first conductive layer over a second surface of the base substrate opposite first recesses of the plurality of recesses;
• disposing a first semiconductor die over the base substrate with an interconnect structure partially disposed within the first recesses;
• and
• removing a portion of the base substrate between the first conductive layer down to second recesses of the plurality of recesses while retaining a portion of the base substrate to form electrically isolated base leads for the interconnect structure.

A method of making a semiconductor device, comprising:

• providing a substrate including a plurality of recesses formed in a first surface of the substrate;
• disposing a first semiconductor die over the substrate with an interconnect structure partially disposed within alternating recesses;
• and
• removing a portion of the substrate down to recesses between the alternating recesses while retaining a portion of the substrate to form electrically isolated base leads.