Bonding pad structure for semiconductor devices
AssigneeNanya Technology Corporation
InventorsTse-Yao Huang, Yi-Nan Chen, Hsien-Wen Liu
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Abstract
A bonding pad structure includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers comprising at least a topmost IMD layer; a bondable metal pad layer disposed on a surface of the topmost IMD layer within a pad forming region; a passivation layer covering a periphery of the bondable metal pad layer and the surface of the topmost IMD layer; and a plurality of via plugs disposed in the topmost IMD layer within an annular region of the pad forming region, wherein the via plugs are not formed in a central region of the pad forming region.
Claims9
A bonding pad structure, comprising:
- a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers comprising at least a topmost IMD layer;
- a bondable metal pad layer disposed on a surface of the topmost IMD layer within a pad forming region;
- a passivation layer covering a periphery of the bondable metal pad layer and the surface of the topmost IMD layer;
- and
- a plurality of via plugs disposed in the topmost IMD layer within an annular region of the pad forming region, wherein the plurality of via plugs are not formed in a central region of the pad forming region.
Dependencies are inferred from the claim text.