Back to results
US 8,476,759 B2Granted
Electrical connection structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYao-Chun Chuang, Chang-Chia Huang, Tsung-Shu Lin, Chen-Cheng Kuo, Chen-Shien Chen
Life of this patent
Estimating the term…
Abstract
A structure comprises a top metal connector formed underneath a bond pad. The bond pad is enclosed by a first passivation layer and a second passivation layer. A polymer layer is further formed on the second passivation layer. The dimension of an opening in the first passivation layer is less than the dimension of the top metal connector. The dimension of the top metal connector is less than the dimensions of an opening in the second passivation layer and an opening in the polymer layer.
Claims14
A structure comprising:
- a first opening with a first dimension formed in a first passivation layer;
- a second opening with a second dimension formed in a second passivation layer;
- a bond pad with a third dimension, wherein the bond pad is embedded in the first passivation layer and the second passivation layer;
- a protection layer formed on the second passivation layer comprising a third opening with a fourth dimension;
- and
- a top metal connector with a fifth dimension formed underneath the bond pad, wherein
- the third dimension is greater than the second dimension;
- the second dimension is greater than the fourth dimension;
- the fourth dimension is greater than the fifth dimension;
- and
- the fifth dimension is greater than the first dimension.
8 more elements
A device comprising:
- a substrate comprising silicon;
- a first metallization layer formed over the substrate;
- a first dielectric layer formed on the first metallization layer;
- a second metallization layer formed on the first dielectric layer;
- a first passivation layer formed over the second metallization layer, wherein a first opening with a first dimension is formed in the first passivation layer;
- a second passivation layer formed over the first passivation layer, wherein a second opening with a second dimension is formed in the second passivation layer;
- a bond pad with a third dimension, wherein the bond pad is embedded in the first passivation layer and the second passivation layer;
- a protection layer formed on the second passivation layer comprising a third opening with a fourth dimension;
- and
- a top metal connector with a fifth dimension formed underneath the bond pad, wherein
- the third dimension is greater than the second dimension;
- the second dimension is greater than the fourth dimension;
- the fourth dimension is greater than the fifth dimension;
- and
- the fifth dimension is greater than the first dimension.
12 more elements
Dependencies are inferred from the claim text.