Flip chip interconnect method and design for GaAs MMIC applications

A monolithic microwave integrated circuit (MMIC) flip chip interconnect comprising:

• a MMIC chip having an active side, a plurality of surface bond pads on a first portion of said active side, and a dielectric coating on a second portion of said active side;
• a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond ads on said MMIC chip;
• a plurality of stud bumps bonded to said surface bond pads on said MMIC chip;
• a first layer of a first plating material plating said stud bumps;
• a second layer of a second plating material plating said first layer;
• and
• a solder bond connecting said plated stud bumps to said surface bond pads on said substrate, wherein exposed edges of said chip are covered with said first and second plating materials.

A monolithic microwave integrated circuit (MMIC) flip chip interconnect comprising:

• a MMIC chip having an active side, a plurality of surface bond pads on a first portion of said active side, and a dielectric coating on a second portion of said active side;
• a substrate spaced from said active side of said MMIC chip and having surface bond pads facing said surface bond pads on said MMIC chip;
• a plurality of stud bumps bonded to said surface bond pads on said MMIC chip;
• a first layer of a first plating material plating said stud bumps;
• a second layer of a second plating material plating said first layer;
• and
• a solder bond connecting said plated stud bumps to said surface bond pads on said substrate, wherein an exposed peripheral portion of the active side of said chip adjacent dicing streets is covered with said first and second plating materials.