C-rich carbon boron nitride dielectric films for use in electronic devices
AssigneeInternational Business Machines Corporation
InventorsSon Van Nguyen, Alfred Grill, Thomas J. Haigh, Jr., Sanjay Mehta
Life of this patent
Estimating the term…
Abstract
A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.
Claims16
A dielectric film having a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent, wherein said nitrogen is uniformly distributed throughout the dielectric film.
A dielectric film having a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent, wherein said nitrogen is provided in selected regions within a depth of the dielectric film providing a graded film.
An electronic device comprising:
- a substrate;
- and
- a dielectric film located on a surface of said substrate, wherein said dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent, wherein said nitrogen is uniformly distributed throughout the dielectric film or is provided in selected regions within the depth of the dielectric film providing a graded film.
Dependencies are inferred from the claim text.