Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsSusumu Obata, Takahiro Sogou, Yusaku Asano, Takeshi Miyagi
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Abstract
According to one embodiment, a semiconductor device includes: a substrate; an organic insulating film provided on the substrate; an inorganic insulating film formed thinner than the organic insulating film on the organic insulating film; a hollow sealing structure that is formed on the inorganic insulating film, and seals a MEMS element in an inside while ensuring a space between the hollow sealing structure itself and the MEMS element; a through hole formed so as to penetrate the organic insulating film and the inorganic insulating film; and a conductive member that is filled into the through hole, and electrically connects the MEMS element and an electrode formed by being filled into the through hole.
Claims7
A semiconductor device comprising:
- a driver IC;
- an organic insulating film provided on the driver IC;
- an inorganic insulating film formed thinner than the organic insulating film on the organic insulating film;
- a hollow sealing structure that is formed on the inorganic insulating film, and seals a MEMS element in an inside while ensuring a space between the hollow sealing structure itself and the MEMS element;
- a through hole formed so as to penetrate the organic insulating film and the inorganic insulating film;
- and
- a conductive member that is filled into the through hole, and electrically connects an external electrode formed on the driver IC and the MEMS element to each other.
Dependencies are inferred from the claim text.