Solid-state imaging device comprising through-electrode

A solid-state imaging device comprising:

• an imaging element formed in a region including a first major surface of a semiconductor substrate;
• an external terminal formed on a second major surface opposing the first major surface of the semiconductor substrate;
• a through-electrode formed in a through-hole formed in the semiconductor substrate and electrically connected to the external terminal;
• a first electrode formed on the through-electrode on the first major surface of the semiconductor substrate;
• a semiconductor region formed in the semiconductor substrate to surround at least a part of a circumference of the through-electrode, the semiconductor region being a diffusion layer having a high impurity concentration and being located adjacent to the through-electrode;
• and
• an interconnect layer formed on the semiconductor region and electrically connected to the semiconductor region,
• wherein a ground potential is supplied to the semiconductor region through the interconnect layer.