High density photodiodes
AssigneeOSI Optoelectronics, Inc.
InventorsPeter Steven Bui, Narayan Dass Taneja
Life of this patent
Estimating the term…
Abstract
The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.
Claims16
A photodiode, having an incident light receiving side and a side opposing the incident light receiving side, comprising:
- a substrate having a V-shaped groove positioned between the incident light receiving side and the side opposing the incident light receiving side, wherein the V-shaped groove is defined by a first inclined side and a second inclined side, wherein said first inclined side and said second inclined side intersect at a point;
- a first doped region positioned at said point, wherein said first doped region is in electrical communication with a metal contact;
- a second doped region positioned along the first inclined side and in physical communication with said first doped region;
- and
- a third doped region positioned along the second inclined side and in physical communication with said first doped region, wherein each of said first, second and third doped region are of the same conductivity type and wherein the first, second, and third doped region form a continuous electrical connection between said incident light receiving side and said side opposing the incident light receiving side.
A photodiode, having an incident light receiving side and a side opposing the incident light receiving side, comprising:
- a substrate having a V shaped groove positioned between the incident light receiving side and the side opposing the incident light receiving side, wherein the V-shaped groove is defined by a first inclined side and a second inclined side, wherein said first inclined side and said second inclined side meet at a point;
- a first doped region positioned at said point;
- a second doped region positioned along the first inclined side and in physical communication with said first doped region;
- and
- a third doped region positioned along the second inclined side and in physical communication with said first doped region, wherein each of said first, second and third doped region are of the same conductivity type and wherein the first, second, and third doped region form a continuous electrical connection between said incident light receiving side and said side opposing the incident light receiving side.
Dependencies are inferred from the claim text.