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US 8,476,722 B2Granted
Magnetic memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsJangeum Lee, Sechung Oh, Jeahyoung Lee, Woojin Kim, Junho Jeong, Woo Chang Lim
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Abstract
A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
Claims27
A magnetic memory device comprising:
- a first vertical magnetic layer;
- a second vertical magnetic layer on the first vertical magnetic layer, the second vertical magnetic layer including a first sub-layer and a second sub-layer;
- a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer;
- and
- an exchange-coupling layer between the first sub-layer and the second sub-layer.
2 more elements
A magnetic memory device comprising:
- a first magnetic layer;
- a second magnetic layer that comprises alternately and repeatedly stacked non-magnetic layers and ferromagnetic layers;
- a tunnel barrier layer between the first magnetic layer and the second magnetic layer;
- and
- an exchange-coupling layer that is disposed within the second magnetic layer.
2 more elements
A magnetic memory device comprising:
- a first ferromagnetic layer;
- a second magnetic layer,
- a tunnel barrier layer between the first ferromagnetic layer and the second magnetic layer;
- a first contact magnetic layer between the first ferromagnetic layer and the tunnel barrier layer;
- and
- an exchange-coupling layer that is disposed between the first magnetic ferromagnetic layer and the first contact magnetic layer.
3 more elements
Dependencies are inferred from the claim text.