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US 8,476,719 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYuta Endo, Toshinari Sasaki, Kosei Noda, Mizuho Sato
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Abstract
Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.
Claims16
A semiconductor device comprising:
- a substrate;
- a gate electrode;
- an oxide semiconductor layer comprising indium and zinc;
- a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
- a first insulating layer between the gate electrode and the oxide semiconductor layer;
- and
- a second insulating layer comprising a silicon peroxide radical,
- wherein the oxide semiconductor layer is provided between the first insulating layer and the second insulating layer,
- wherein the second insulating layer is in contact with the oxide semiconductor layer, and
- wherein the oxide semiconductor layer is dehydrated or dehydrogenated.
7 more elements
A semiconductor device comprising an insulating layer in contact with an oxide semiconductor layer,
- wherein the oxide semiconductor layer comprises indium and zinc,
- wherein the insulating layer comprises a silicon peroxide radical, and
- wherein the oxide semiconductor layer is dehydrated or dehydrogenated.
Dependencies are inferred from the claim text.