Semiconductor transistors having reduced distances between gate electrode regions

A semiconductor structure, comprising:

• a semiconductor substrate which includes a top substrate surface which defines a reference direction perpendicular to the top substrate surface, wherein the semiconductor substrate comprises a first semiconductor body region and a second semiconductor body region;
• a first gate dielectric region and a second gate dielectric region on top of the first and second semiconductor body regions, respectively;
• a first gate electrode region and a second gate electrode region, wherein the first gate electrode region is on top of and in direct physical contact with a top surface of the first gate dielectric region, and wherein the second gate electrode region is on top of and in direct physical contact with a top surface of the second gate dielectric region;
• a gate divider region, wherein the gate divider region is in direct physical contact with the first and second gate electrode regions, and wherein the gate divider region does not overlap the first and second gate electrode regions in the reference direction;
• a shallow trench isolation (STI) region, wherein the STI region is in direct physical contact with the first and second semiconductor body regions and the gate divider region, wherein the first and second semiconductor body regions do not overlap the STI region in the reference direction, wherein the entire gate divider region overlaps the STI region in the reference direction, and wherein a top surface of the STI region is coplanar with a bottom surface of the gate divider region, the top surface of the first gate dielectric region and the top surface of the second gate dielectric region.