Semiconductor device
AssigneePanasonic Corporation
InventorsJun Suzuki, Hiroshi Nakagawa
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate; an n-channel MOS transistor including a first gate insulating film provided on a p-type layer, a first gate electrode made of TiN, and a first upper gate electrode made of semiconductor doped with impurities; and a p-channel MOS transistor including a second gate insulating film provided on an n-type layer, a second gate electrode including at least as a part, a TiN layer made of TiN crystal in which a ratio of (111) orientation/(200) orientation is about 1.5 or more, and a second upper gate electrode made of semiconductor doped with impurities.
Claims12
A semiconductor device comprising:
- a semiconductor substrate including a p-type layer and an n-type layer in an upper portion;
- an n-channel MOS transistor including
- a first gate insulating film provided on the p-type layer,
- a first gate electrode provided on the first gate insulating film and made of TiN, and
- a first upper gate electrode provided on the first gate electrode and made of semiconductor doped with impurities;
- and
- a p-channel MOS transistor including
- a second gate insulating film provided on the n-type layer,
- a second gate electrode provided on the second gate insulating film and made of TiN, and
- a second upper gate electrode provided on the second gate electrode and made of semiconductor doped with impurities,
- wherein the second gate electrode has a thickness of about 15 nm to about 25 nm, and
- the second gate electrode includes a first TiN layer, the first TiN layer is made of TiN crystal in which the ratio of (111) orientation/(200) orientation is about 1.5 or more.
Dependencies are inferred from the claim text.