Vertical-type semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung-Jun Lee, Woonkyung Lee
Life of this patent
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Abstract
A vertical-type semiconductor device includes a semiconductor substrate having a cell region and a peripheral circuit region, a wordline structure on the cell region of the semiconductor substrate, the wordline structure including a plurality of wordlines stacked on top of each other, a semiconductor structure through the wordline structure, a gate dielectric between the wordline structure and the semiconductor structure, and a dummy wordline structure on the peripheral circuit region, the dummy wordline structure having a vertical structure and including same components as the wordline structure.
Claims18
A vertical-type semiconductor device, comprising:
- a semiconductor substrate having a cell region and a peripheral circuit region;
- a wordline structure on the cell region of the semiconductor substrate, the wordline structure including a plurality of wordlines stacked on top of each other;
- a semiconductor structure through the wordline structure;
- a gate dielectric between the wordline structure and the semiconductor structure;
- and
- a dummy wordline structure on the peripheral circuit region, the dummy wordline structure having a vertical structure and including same components as the wordline structure.
A method for manufacturing a vertical-type semiconductor device, the method comprising:
- forming a wordline structure on a cell region of a semiconductor substrate, the wordline structure including a plurality of wordlines stacked on top of each other;
- forming a semiconductor structure through the wordline structure;
- forming a gate dielectric between the wordline structure and the semiconductor structure;
- and
- forming a dummy wordline structure on a peripheral circuit region of the semiconductor substrate, the dummy wordline structure having a vertical structure and including same components as the wordline structure.
Dependencies are inferred from the claim text.