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US 8,476,712 B2Granted
Surge-current-resistant semiconductor diode with soft recovery behavior and methods for producing a semiconductor diode
AssigneeInfineon Technologies Austria AG
InventorsRoman Baburske, Josef Lutz, Ralf Siemieniec, Hans-Joachim Schulze
Life of this patent
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Abstract
A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor.
Claims21
A bipolar semiconductor component, comprising:
- a semiconductor body having a first horizontal surface, a second surface which runs substantially parallel to the first surface, and at least one load pn junction;
- a first metallization arranged on the first surface;
- a second metallization arranged on the second surface;
- at least one current path which runs in the semiconductor body from the first metallization to the second metallization only through n-doped zones;
- and
- wherein a space charge region forms in the semiconductor body beginning below the at least one load pn junction and extending above the at least one load pn junction and ending before the first horizontal surface to prevent current flow between the first and second metallizations when a positive voltage is applied between the second metallization and the first metallization.
3 more elements
A semiconductor diode having a dynamic anode emitter efficiency, comprising:
- a cathode;
- an anode spaced apart from the cathode by a semiconductor body, the anode disposed on a first horizontal surface of the semiconductor body and the cathode disposed on a second horizontal surface of the semiconductor body which opposes the first surface;
- an anode structure adjacent the anode and formed in the semiconductor body, the anode structure comprising a plurality of p-doped anode emitter zones respectively spaced apart from one another by an n-doped channel zone;
- and
- wherein a space charge region forms in the semiconductor body beginning below a load pn junction formed by the p-doped anode emitter zones and extending above the load pn junction and ending in the semiconductor body before the first horizontal surface to prevent current flow between the anode and the cathode when a positive voltage is applied between the cathode and the anode.
2 more elements
A bipolar semiconductor component, comprising:
- a semiconductor body having a first horizontal surface and a second surface which runs substantially parallel to the first surface;
- a first metallization arranged on the first surface;
- a second metallization arranged on the second surface;
- an n-doped first semiconductor region arranged in the semiconductor body, in ohmic contact with the second metallization;
- at least two p-doped second semiconductor regions arranged in a manner spaced apart from one another horizontally in the semiconductor body, the at least two p-doped second semiconductor regions forming a load pn junction with the first semiconductor region;
- at least one current path which runs in the semiconductor body from the first metallization to the second metallization only through n-doped zones, wherein a first section of the current path runs between two adjacent second semiconductor regions;
- and
- wherein a space charge region forms in the semiconductor body beginning below the load pn junction and extending above the load pn junction and ending before the first horizontal surface to prevent current flow between the first and second metallizations when a positive voltage is applied between the second metallization and the first metallization.
5 more elements
Dependencies are inferred from the claim text.