Image sensor and method for fabricating the same
AssigneeIntellectual Ventures II LLC
InventorKwang-Ho Lee
Life of this patent
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Abstract
An image sensor includes a trench formed by a shallow trench isolation (STI) process, a channel stop layer formed over a substrate in the trench, an isolation structure filled in the trench, and a photodiode formed in the substrate adjacent to a sidewall of the trench. In more detail of the image sensor, a trench is formed in a substrate through a STI process, and a channel stop layer is formed over the substrate in the trench. An isolation structure is formed in the trench, and a photodiode is fanned in the substrate adjacent to a sidewall of the trench.
Claims17
An image sensor, comprising:
- a trench disposed in a substrate;
- a channel stop layer disposed over an inner surface of the trench;
- an isolation structure disposed within the trench;
- and
- a photodiode disposed in the substrate.
An image sensor, comprising:
- a trench disposed in a substrate;
- a channel stop layer disposed within the trench;
- an isolation structure disposed within the trench;
- and
- a photodiode disposed in the substrate.
An image sensor, comprising:
- a trench disposed in a substrate;
- a channel stop layer disposed within the trench;
- and
- a thermal oxide layer disposed between the channel stop layer and an isolation structure.
Dependencies are inferred from the claim text.