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US 8,476,683 B2Granted
On-chip radiation dosimeter
AssigneeInternational Business Machines Corporation
InventorsMichael S. Gordon, Kenneth P. Rodbell, Jeng-Bang Yau
Life of this patent
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Abstract
A semiconductor device includes a first field effect transistor (FET) located on a substrate; and a second FET located on the substrate, the second FET comprising a first buried oxide (BOX) region located underneath a channel region of the second FET, wherein the first BOX region of the second FET is configured to cause the second FET to have a higher radiation sensitivity that the first FET.
Claims5
A semiconductor device, comprising:
- a first field effect transistor (FET) located on a substrate;
- and
- a second FET located on the substrate, the second FET comprising a first buried oxide (BOX) region located underneath a channel region of the second FET, wherein the first BOX region of the second FET is configured to cause the second FET to have a higher radiation sensitivity that the first FET, wherein the first FET comprises a second BOX region located underneath a channel region of first FET, and wherein the second BOX region comprises a lower number of hole traps per unit of area than a number of hole traps per unit are in the first BOX region.
Dependencies are inferred from the claim text.